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BR350 A3010 1N4806B 24C12E24 LC74411N IRF520 MA2Z376 PM951B
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  Datasheet File OCR Text:
 SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. FEATURES
Average Forward Current : IO=35A. Zener Voltage : 37V(Typ.)
E35A37VBS, E35A37VBR
STACK SILICON DIFFUSED DIODE
A
POLARITY
E35A37VBS (+ Type) E35A37VBR (- Type)
K
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC Average Forward Current Peak 1 Cycle Surge Current Repetitive Peak Reverse Surge Current (Pulse width=10mS) Transient Peak Reverse Voltage Peak Reverse Voltage Junction Temperature Storage Temperature Range
)
SYMBOL IF(AV) IFSM IRSM VRSM VRM Tj Tstg RATING 35 300 (60Hz) 35 UNIT A A A
G B JD F
EI
DIM A B C D E F G H I J K
MILLIMETERS 11.5 MAX 12.75+0.09-0.00 _ 1.3 + 0.04 _ 4.2+ 0.2 _ 8.0 + 0.2 TYP 0.5 _ 10.0 + 0.2 _ 0.4+ 0.1x45 8.5 MAX 0.2+0.1 _ 28.35+ 0.5
B-PF
34 32 -40 215 -40 215 V V
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Forward Voltage Zener Voltage Reverse Current Transient Thermal Resistance Breakdown Voltage Temperature Coefficient Reverse Leakage Current Under High Temperature Temperature Resistance
)
TEST CONDITION IFM=100A IZ=10mA VR=32V IFM=100A, IM=100mA, Pw=100mS Irsm=35A, Pw=10mS IZ=10mA Ta=150 , VR=32V DC total junction to case MIN. 34 TYP. 37 27 MAX. 1.15 40 10 70 55 100 0.8 UNIT V V A mV V mV/ A /W VF
SYMBOL
VZ IR VF Vbr
T
HIR Rth
2002. 1. 30
Revision No : 1
1/1


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